Process Sensors Corporation

Furnace Silicon Carbide Crystal Growth

Furnace Silicon Carbide Crystal Growth

In the furnace, silicon carbide crystals can be grown in two ways using the PVT method. The first is the physical vapor transport process, and the second chemical deposition.  The physical process involves the growth of a crystal seed by changing the silicon carbide powder to a gas.  In this method, there must be an initial seed crystal for the gaseous SiC to grab onto and bond. The chemical process has the SiC start as a gas. In this method, the seed crystal grows on it’s own; the gas causes a chemical reaction directly on the seed crystal itself, expanding from the crystal outward. 

Silicon carbide crystals can form many different structures based on furnace temperature. If the temperature isn’t controlled properly, the SiC crystals can't be used on the wafers they were designed for. As such, accurate temperature measurement is critical to a successfully made semiconductor wafer. Otherwise, thousands of dollars are lost in the time and energy spent to run the furnace.

The products below will help manufacturers keep to the correct temperature, preserving the necessary crystal growth formation. If these items interest you, our enthusiastictic sales team can help you narrow down which one best fits your project and budget. If you wish to get in contact, please click the "Discuss your Application" button on the side.

 


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